RS3A R6 Tech Spezifikatioune
Taiwan Semiconductor Corporation - RS3A R6 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Taiwan Semiconductor Corporation - RS3A R6
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Taiwan Semiconductor | |
| Voltage - Viru (Vf) (Max) @ Wann | 1.3 V @ 3 A | |
| Voltage - DC Reverse (Vr) (Max) | 50 V | |
| Technologie | Standard | |
| Supplier Device Package | DO-214AB (SMC) | |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) | |
| Serie | - | |
| Reverse Recovery Time (trr) | 150 ns |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Package / Case | DO-214AB, SMC | |
| Package protegéieren | Tape & Reel (TR) | |
| Operatiounstemperatur - Junction | -55°C ~ 150°C | |
| Mounting Type | Surface Mount | |
| Aktuell - Reverse Leakage @ Vr | 10 µA @ 50 V | |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 3A | |
| Capacitance @ Vr, F. | - |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Taiwan Semiconductor Corporation RS3A R6.
| Produktiounsattriff |  |
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|
 |
|---|---|---|---|---|
| Part Number | RS3A R6 | RS3A-E3/57T | RS3DHE3/57T | RS3A-13-F |
| Hiersteller | Taiwan Semiconductor Corporation | Vishay General Semiconductor - Diodes Division | Vishay General Semiconductor - Diodes Division | Diodes Incorporated |
| Operatiounstemperatur - Junction | -55°C ~ 150°C | -55°C ~ 150°C | -55°C ~ 150°C | -65°C ~ 150°C |
| Technologie | Standard | Standard | Standard | Standard |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Serie | - | - | - | - |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) |
| Capacitance @ Vr, F. | - | 44pF @ 4V, 1MHz | 44pF @ 4V, 1MHz | 50pF @ 4V, 1MHz |
| Supplier Device Package | DO-214AB (SMC) | DO-214AB (SMC) | DO-214AB (SMC) | SMC |
| Voltage - DC Reverse (Vr) (Max) | 50 V | 50 V | 200 V | 50 V |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 3A | 3A | 3A | 3A |
| Reverse Recovery Time (trr) | 150 ns | 150 ns | 150 ns | 150 ns |
| Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
| Voltage - Viru (Vf) (Max) @ Wann | 1.3 V @ 3 A | 1.3 V @ 2.5 A | 1.3 V @ 2.5 A | 1.3 V @ 3 A |
| Aktuell - Reverse Leakage @ Vr | 10 µA @ 50 V | 10 µA @ 50 V | 10 µA @ 200 V | 5 µA @ 50 V |
| Package / Case | DO-214AB, SMC | DO-214AB, SMC | DO-214AB, SMC | DO-214AB, SMC |
Eroflueden RS3A R6 PDF DataDhusts an Taiwan Semiconductor Corporation Dokumentatioun fir RS3A R6 - Taiwan Semiconductor Corporation.
RS3A-E3/57TVishay General Semiconductor - Diodes DivisionDIODE GEN PURP 50V 3A DO214AB
RS358AXMRunic TechnologyIC CMOS 2 CIRCUIT 8MSOPRS358XKRUNRS358XMRS384M32LD3D2LMZ-125BTRaysonRS3DHE3/57TVishay General Semiconductor - Diodes DivisionDIODE GEN PURP 200V 3A DO214ABRS3A-13-FDiodes IncorporatedDIODE GEN PURP 50V 3A SMCRS3B-13-FDiodes IncorporatedDIODE GEN PURP 100V 3A SMC
RS38EITexas InstrumentsRS358XK/RS358AXKRUN
RS3BB-13-FDiodes IncorporatedDIODE GEN PURP 100V 3A SMBRS3AB-13Diodes IncorporatedDIODE GEN PURP 50V 3A SMBRS358SORISTERRS3D-13-FDiodes IncorporatedDIODE GEN PURP 200V 3A SMCRS3801-001KRSRS3824DMRSRS3AB-13-FDiodes IncorporatedDIODE GEN PURP 50V 3A SMBRS3DB-13-FDiodes IncorporatedDIODE GEN PURP 200V 3A SMC| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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